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CS4N65FA9R-G - Silicon N-Channel Power MOSFET

CS4N65FA9R-G Description

Silicon N-Channel Power MOSFET CS4N65F A9R-G ○R General .
CS4N65F A9R-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, impro.

CS4N65FA9R-G Applications

* Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2 dv/dt a3 PD TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage Single Pu

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Silicon N-Channel Power MOSFET Huajing Microelectronics
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