CS4N65FA9R-G Datasheet - Huajing Microelectronics

CS4N65FA9R-G - Silicon N-Channel Power MOSFET

CS4N65F A9R-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization.

CS4N65FA9R-G Features

* l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 14.5nC) l Low Reverse transfer capacitances(Typical:3.5pF) l 100% Single Pulse avalanche energy Test l Halogen Free Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）：

CS4N65FA9R-G-HuajingMicroelectronics.pdf

CS4N65FA9R-G Datasheet Preview — Preview of CS4N65FA9R-G PDF

Datasheet Details

Part number:

CS4N65FA9R-G

Manufacturer:

Huajing Microelectronics

File Size:

263.49 KB

Description:

Silicon n-channel power mosfet.

CS4N65FA9R-G Distributor

📁 Related Datasheet

CS4N65FA9R CS4N65FA9HD CS4N65A3HD CS4N65A3HDY CS4N65A3R CS4N65A3TDY

📌 All Tags

CS4N65FA9R-G Silicon N-Channel Power MOSFET Huajing Microelectronics