CS4N65FA9R-G Datasheet, Mosfet, Huajing Microelectronics

CS4N65FA9R-G Features

• Mosfet l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 14.5nC) l Low Reverse transfer capacitances(Typical:3.5pF) l 100% Single Pulse avalanche energy Test l Halog

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Part number:

CS4N65FA9R-G

Manufacturer:

Huajing Microelectronics

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263.49kb

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📄 Datasheet

Description:

Silicon n-channel power mosfet. CS4N65F A9R-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the condu

CS4N65FA9R-G Application

• Applications Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a

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CS4N65FA9R-G

Huajing Microelectronics

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