Part number:
CS4N65A3HDY
Manufacturer:
Huajing Microelectronics
File Size:
352.67 KB
Description:
Silicon n-channel power mosfet.
CS4N65A3HDY-HuajingMicroelectronics.pdf
Datasheet Details
CS4N65 A3HDY, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 650 4 75 2 performance and enhance the avalanche energy.
The transistor can be used in various power switch
CS4N65A3HDY Features
* l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:14.5nC) l Low Reverse transfer capacitances(Typical: 8.5pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Paramete
CS4N65A3HDY-HuajingMicroelectronics.pdf
Datasheet Details
CS4N65A3HDY
Huajing Microelectronics
352.67 KB
Silicon n-channel power mosfet.
📁 Related Datasheet
📌 All Tags