CS4N65A3HDY Datasheet - Huajing Microelectronics

CS4N65A3HDY Silicon N-Channel Power MOSFET

CS4N65 A3HDY, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 650 4 75 2 performance and enhance the avalanche energy. The transistor can be used in various power switch.

CS4N65A3HDY Features

* l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:14.5nC) l Low Reverse transfer capacitances(Typical: 8.5pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Paramete

CS4N65A3HDY-HuajingMicroelectronics.pdf