CS4N65A3HDY

Silicon N-Channel Power MOSFET

Huajing Microelectronics

CS4N65A3HDY Features

* l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:14.5nC) l Low Reverse transfer capacitances(Typical: 8.5pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Paramete

CS4N65A3HDY General Description

CS4N65 A3HDY, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 650 4 75 2 performance and enhance the avalanche energy. The transistor can be used in various power switch.

CS4N65A3HDY Datasheet (352.67 KB)

CS4N65A3HDY Datasheet Preview — Preview of CS4N65A3HDY PDF

Datasheet Details

Part number:

CS4N65A3HDY

Manufacturer:

Huajing Microelectronics

File Size:

352.67 KB

Description:

Silicon n-channel power mosfet.

📁 Related Datasheet

CS4N65A3HD Silicon N-Channel Power MOSFET (HUAJING)

CS4N65A3R Silicon N-Channel Power MOSFET (Huajing Microelectronics)

CS4N65A3TDY Silicon N-Channel Power MOSFET (Huajing Microelectronics)

CS4N65A4D Silicon N-Channel Power MOSFET (HUAJING)

CS4N65A4HDY Silicon N-Channel Power MOSFET (Huajing Microelectronics)

CS4N65A4R Silicon N-Channel Power MOSFET (Huajing Microelectronics)

CS4N65A4TDY Silicon N-Channel Power MOSFET (Huajing Microelectronics)

CS4N65A8HD Silicon N-Channel Power MOSFET (Huajing Microelectronics)

CS4N65A8RZ-G Silicon N-Channel Power MOSFET (CR Micro)

CS4N65ARR Silicon N-Channel Power MOSFET (CR Micro)

TAGS

CS4N65A3HDY Silicon N-Channel Power MOSFET Huajing Microelectronics

Image Gallery

CS4N65A3HDY Features

CS4N65A3HDY General Description

Datasheet Details

File Size:

Description:

CS4N65A3HDY Distributor