Datasheet Details
| Part number | CS4N65A3HDY |
|---|---|
| Manufacturer | Huajing Microelectronics |
| File Size | 352.67 KB |
| Description | Silicon N-Channel Power MOSFET |
| Datasheet |
 CS4N65A3HDY Datasheet
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| Part number | CS4N65A3HDY |
|---|---|
| Manufacturer | Huajing Microelectronics |
| File Size | 352.67 KB |
| Description | Silicon N-Channel Power MOSFET |
| Datasheet |
CS4N65A3HDY Datasheet
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CS4N65 A3HDY, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 650 4 75 2 performance and enhance the avalanche energy.The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.The package form is TO-251, which accords with the RoHS standard.
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