CS4N65A3HDY Datasheet, Mosfet, Huajing Microelectronics

CS4N65A3HDY Features

• Mosfet l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:14.5nC) l Low Reverse transfer capacitances(Typical: 8.5pF) l 100% Single Pulse avalanche energy Test Applica

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CS4N65A3HDY

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Huajing Microelectronics

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📄 Datasheet

Description:

Silicon n-channel power mosfet. CS4N65 A3HDY, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conductio

CS4N65A3HDY Application

• Applications Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter Rating VDSS ID IDMa1 V

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CS4N65A3HDY

Huajing Microelectronics

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