Datasheet4U Logo Datasheet4U.com

CS4N60FA9HD

Silicon N-Channel Power MOSFET

CS4N60FA9HD Features

* l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 14.5nC) l Low Reverse transfer capacitances(Typical: 8.5pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Paramet

CS4N60FA9HD General Description

CS4N60F A9HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization .

CS4N60FA9HD Datasheet (317.67 KB)

Preview of CS4N60FA9HD PDF

Datasheet Details

Part number:

CS4N60FA9HD

Manufacturer:

Huajing Discrete Devices

File Size:

317.67 KB

Description:

Silicon n-channel power mosfet.

📁 Related Datasheet

CS4N60FA9R Silicon N-Channel Power MOSFET (Huajing Microelectronics)

CS4N60FA9TDY Silicon N-Channel Power MOSFET (Huajing Microelectronics)

CS4N60F N-CHANNEL MOSFET (ETC)

CS4N60 VDMOS (EDN)

CS4N60A3HD Silicon N-Channel Power MOSFET (Huajing Microelectronics)

CS4N60A3R Silicon N-Channel Power MOSFET (Huajing Microelectronics)

CS4N60A3TDY Silicon N-Channel Power MOSFET (Huajing Microelectronics)

CS4N60A4HD Silicon N-Channel Power MOSFET (Huajing Microelectronics)

CS4N60A4R Silicon N-Channel Power MOSFET (Huajing Microelectronics)

CS4N60A4TDY Silicon N-Channel Power MOSFET (Huajing Microelectronics)

TAGS

CS4N60FA9HD Silicon N-Channel Power MOSFET Huajing Discrete Devices

Image Gallery

CS4N60FA9HD Datasheet Preview Page 2 CS4N60FA9HD Datasheet Preview Page 3

CS4N60FA9HD Distributor