CS4N60FA9HD Datasheet, Mosfet, Huajing Discrete Devices

CS4N60FA9HD Features

• Mosfet l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 14.5nC) l Low Reverse transfer capacitances(Typical: 8.5pF) l 100% Single Pulse avalanche energy Test Applic

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Part number:

CS4N60FA9HD

Manufacturer:

Huajing Discrete Devices

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317.67kb

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📄 Datasheet

Description:

Silicon n-channel power mosfet. CS4N60F A9HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduc

CS4N60FA9HD Application

• Applications Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a

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CS4N60FA9HD

Huajing Discrete Devices

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