CS4N60A3R Datasheet - Huajing Microelectronics

CS4N60A3R Silicon N-Channel Power MOSFET

CS4N60 A3R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization an.

CS4N60A3R Features

* l Fast Switching l Low ON Resistance(Rdson≤2.5Ω) l Low Gate Charge (Typical Data: 14.5nC) l Low Reverse transfer capacitances(Typical:4pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Para

CS4N60A3R-HuajingDiscreteDevices.pdf