CS4N60A4R Silicon N-Channel Power MOSFET

Huajing Microelectronics

Description

Silicon N-Channel Power MOSFET ○R CS4N60 A4R General .
CS4N60 A4R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve.

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Datasheet Specifications

Part number: CS4N60A4R
Manufacturer: Huajing Microelectronics
File Size: 277.10 KB
Datasheet: CS4N60A4R-HuajingDiscreteDevices.pdf
Description: Silicon N-Channel Power MOSFET

Applications

* Power switch circuit of adaptor and charger. Absolute（TJ= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2 dv/dt a3 PD TJ，Tstg Drain-to-Source Voltage Continuous Drain Current TC = 25 °C Continuous Drain Current TC = 100 °C Pulsed Drain Current TC = 25 °C Gate-to-Source

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CS4N60A4R Silicon N-Channel Power MOSFET Huajing Microelectronics

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