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CS4N60A4R Silicon N-Channel Power MOSFET

CS4N60A4R Description

Silicon N-Channel Power MOSFET ○R CS4N60 A4R General .
CS4N60 A4R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve.

CS4N60A4R Applications

* Power switch circuit of adaptor and charger. Absolute（TJ= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2 dv/dt a3 PD TJ，Tstg Drain-to-Source Voltage Continuous Drain Current TC = 25 °C Continuous Drain Current TC = 100 °C Pulsed Drain Current TC = 25 °C Gate-to-Source

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Datasheet Details

Part number
CS4N60A4R
Manufacturer
Huajing Microelectronics
File Size
277.10 KB
Datasheet
CS4N60A4R-HuajingDiscreteDevices.pdf
Description
Silicon N-Channel Power MOSFET

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Silicon N-Channel Power MOSFET Huajing Microelectronics
Huajing Microelectronics CS4N60A4R-like datasheet