CS4N60A4TDY Datasheet - Huajing Microelectronics

Silicon N-Channel Power MOSFET

CS4N60A4TDY Features

* l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 13nC) l Low Reverse transfer capacitances(Typical: 2.2pF) l 100% Single Pulse avalanche energy Test VDSS ID PD(TC=25℃) RDS(ON)Typ 600 V 4A 75 W 2.0 Ω Applications： Power switch circuit of adaptor and charger. Absolute（T

CS4N60A4TDY General Description

CS4N60 A4TDY, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and hi.

CS4N60A4TDY Datasheet (350.95 KB)

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Part number:

CS4N60A4TDY

Manufacturer:

Huajing Microelectronics

File Size:

350.95 KB

Description:

Silicon n-channel power mosfet.

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CS4N60A4TDY Silicon N-Channel Power MOSFET Huajing Microelectronics

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CS4N60A4TDY Features

CS4N60A4TDY General Description

Datasheet Details

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