CS4N60A4HD Datasheet - Huajing Microelectronics

Silicon N-Channel Power MOSFET

CS4N60A4HD Features

* l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 14.5nC) l Low Reverse transfer capacitances(Typical: 8.5pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Paramet

CS4N60A4HD General Description

CS4N60 A4HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 600 4 75 1.8 performance and enhance the avalanche energy. The transistor can be used in various power switc.

CS4N60A4HD Datasheet (352.11 KB)

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CS4N60A4HD

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Huajing Microelectronics

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352.11 KB

Description:

Silicon n-channel power mosfet.

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CS4N60A4HD Silicon N-Channel Power MOSFET Huajing Microelectronics

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CS4N60A4HD Features

CS4N60A4HD General Description

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