CS4N60A7HD Datasheet - Huajing Microelectronics

CS4N60A7HD Silicon N-Channel Power MOSFET

CS4N60 A7HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ performance and enhance the avalanche energy. The transistor can be used in various power switching circuit f.

CS4N60A7HD Features

* l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 14.5nC) l Low Reverse transfer capacitances(Typical: 8.5pF) l 100% Single Pulse avalanche energy Test 600 V 4A 30 W 1.8 Ω Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise spe

CS4N60A7HD-HuajingMicroelectronics.pdf