CS4N60A7HD Datasheet - Huajing Microelectronics

Silicon N-Channel Power MOSFET

CS4N60A7HD Features

* l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 14.5nC) l Low Reverse transfer capacitances(Typical: 8.5pF) l 100% Single Pulse avalanche energy Test 600 V 4A 30 W 1.8 Ω Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise spe

CS4N60A7HD General Description

CS4N60 A7HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ performance and enhance the avalanche energy. The transistor can be used in various power switching circuit f.

CS4N60A7HD Datasheet (339.75 KB)

CS4N60A7HD Datasheet Preview — Preview of CS4N60A7HD PDF

Datasheet Details

Part number:

CS4N60A7HD

Manufacturer:

Huajing Microelectronics

File Size:

339.75 KB

Description:

Silicon n-channel power mosfet.

📁 Related Datasheet

CS4N60A3HD Silicon N-Channel Power MOSFET (Huajing Microelectronics)

CS4N60A3R Silicon N-Channel Power MOSFET (Huajing Microelectronics)

CS4N60A3TDY Silicon N-Channel Power MOSFET (Huajing Microelectronics)

CS4N60A4HD Silicon N-Channel Power MOSFET (Huajing Microelectronics)

CS4N60A4R Silicon N-Channel Power MOSFET (Huajing Microelectronics)

CS4N60A4TDY Silicon N-Channel Power MOSFET (Huajing Microelectronics)

CS4N60A8HD Silicon N-Channel Power MOSFET (Huajing Microelectronics)

CS4N60ARRD Silicon N-Channel Power MOSFET (Huajing Microelectronics)

CS4N60 VDMOS (EDN)

CS4N60F N-CHANNEL MOSFET (ETC)

TAGS

CS4N60A7HD Silicon N-Channel Power MOSFET Huajing Microelectronics

Image Gallery

CS4N60A7HD Features

CS4N60A7HD General Description

Datasheet Details

File Size:

Description:

CS4N60A7HD Distributor