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CS4N60A3TDY

Silicon N-Channel Power MOSFET

CS4N60A3TDY Features

* l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 13nC) l Low Reverse transfer capacitances(Typical: 2.2pF) l 100% Single Pulse avalanche energy Test VDSS ID PD(TC=25℃) RDS(ON)Typ 600 V 4A 75 W 2.0 Ω Applications: Power switch circuit of adaptor and charger. Absolute(T

CS4N60A3TDY General Description

CS4N60 A3TDY, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and hi.

CS4N60A3TDY Datasheet (355.68 KB)

Preview of CS4N60A3TDY PDF

Datasheet Details

Part number:

CS4N60A3TDY

Manufacturer:

Huajing Microelectronics

File Size:

355.68 KB

Description:

Silicon n-channel power mosfet.

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CS4N60A3TDY Silicon N-Channel Power MOSFET Huajing Microelectronics

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