Datasheet4U Logo Datasheet4U.com

CS4N60FA9TDY Silicon N-Channel Power MOSFET

CS4N60FA9TDY Description

Silicon N-Channel Power MOSFET CS4N60F A9TDY ○R General .
CS4N60F A9TDY, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, impr.

CS4N60FA9TDY Applications

* Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3 PD VESD(G-S) TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-

📥 Download Datasheet

Preview of CS4N60FA9TDY PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • CS4N60FA9HD - Silicon N-Channel Power MOSFET (Huajing Discrete Devices)
  • CS4N60F - N-CHANNEL MOSFET (ETC)
  • CS4N60 - VDMOS (EDN)
  • CS4N65A3HD - Silicon N-Channel Power MOSFET (HUAJING)
  • CS4N65A4D - Silicon N-Channel Power MOSFET (HUAJING)
  • CS4N65A8RZ-G - Silicon N-Channel Power MOSFET (CR Micro)
  • CS4N65ARR - Silicon N-Channel Power MOSFET (CR Micro)
  • CS4N65FA9HD - Silicon N-Channel Power MOSFET (HUAJING)

📌 All Tags

Silicon N-Channel Power MOSFET Huajing Microelectronics
Huajing Microelectronics CS4N60FA9TDY-like datasheet