CS4N65A3TDY Datasheet - Huajing Microelectronics

CS4N65A3TDY, Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET CS4N65 A3TDY ○R General .
CS4N65 A3TDY, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improv.

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Datasheet Details

Part number:

CS4N65A3TDY

Manufacturer:

Huajing Microelectronics

File Size:

236.76 KB

Description:

Silicon N-Channel Power MOSFET

Applications

* Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3 PD VESD(G-S) TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-

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CS4N65A3TDY Silicon N-Channel Power MOSFET Huajing Microelectronics

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