Part number:
CS4N65A3TDY
Manufacturer:
Huajing Microelectronics
File Size:
236.76 KB
Description:
Silicon n-channel power mosfet.
CS4N65A3TDY-HuajingMicroelectronics.pdf
Datasheet Details
CS4N65 A3TDY, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for system miniaturization
CS4N65A3TDY Features
* l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 13nC) l Low Reverse transfer capacitances(Typical: 2.2pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter
CS4N65A3TDY-HuajingMicroelectronics.pdf
Datasheet Details
CS4N65A3TDY
Huajing Microelectronics
236.76 KB
Silicon n-channel power mosfet.
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