Part number:
CS4N65A3R
Manufacturer:
Huajing Microelectronics
File Size:
219.58 KB
Description:
Silicon n-channel power mosfet.
CS4N65A3R-HuajingDiscreteDevices.pdf
Datasheet Details
CS4N65 A3R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for system miniaturization an
CS4N65A3R Features
* l Fast Switching l Low ON Resistance(Rdson≤2.8Ω) l Low Gate Charge (Typical Data: 14.5nC) l Low Reverse transfer capacitances(Typical:3.5pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Pa
CS4N65A3R-HuajingDiscreteDevices.pdf
Datasheet Details
CS4N65A3R
Huajing Microelectronics
219.58 KB
Silicon n-channel power mosfet.
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