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CS4N65A3R

Silicon N-Channel Power MOSFET

CS4N65A3R Features

* l Fast Switching l Low ON Resistance(Rdson≤2.8Ω) l Low Gate Charge (Typical Data: 14.5nC) l Low Reverse transfer capacitances(Typical:3.5pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Pa

CS4N65A3R General Description

CS4N65 A3R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization an.

CS4N65A3R Datasheet (219.58 KB)

Preview of CS4N65A3R PDF

Datasheet Details

Part number:

CS4N65A3R

Manufacturer:

Huajing Microelectronics

File Size:

219.58 KB

Description:

Silicon n-channel power mosfet.

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CS4N65A3R Silicon N-Channel Power MOSFET Huajing Microelectronics

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