CS4N65FA9R Datasheet - Huajing Microelectronics

Silicon N-Channel Power MOSFET

CS4N65FA9R Features

* l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 14.5nC) l Low Reverse transfer capacitances(Typical:3.5pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Paramete

CS4N65FA9R General Description

CS4N65F A9R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization a.

CS4N65FA9R Datasheet (263.17 KB)

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CS4N65FA9R

Manufacturer:

Huajing Microelectronics

File Size:

263.17 KB

Description:

Silicon n-channel power mosfet.

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CS4N65FA9R Features

CS4N65FA9R General Description

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