CS4N70A4D-G Silicon N-Channel Power MOSFET

CR Micro

Description

Silicon N-Channel Power MOSFET ○R CS4N70 A4D-G General .
CS4N70 A4D-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improv.

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Datasheet Specifications

Part number: CS4N70A4D-G
Manufacturer: CR Micro
File Size: 796.89 KB
Datasheet: CS4N70A4D-G-CRMicro.pdf
Description: Silicon N-Channel Power MOSFET

Features

* Fast Switching
* ESD Improved Capability
* Low Gate Charge (Typical Data: 15nC)
* Low Reverse transfer capacitances(Typical: 9pF)
* 100% Single Pulse avalanche energy Test

Applications

* Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3 PD Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage Single

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CS4N70A4D-G Silicon N-Channel Power MOSFET CR Micro

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