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CS4N70A3D

Silicon N-Channel Power MOSFET

CS4N70A3D Features

* l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 15nC) l Low Reverse transfer capacitances(Typical: 9pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter

CS4N70A3D General Description

CS4N70 A3D, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization an.

CS4N70A3D Datasheet (427.33 KB)

Preview of CS4N70A3D PDF

Datasheet Details

Part number:

CS4N70A3D

Manufacturer:

Huajing Microelectronics

File Size:

427.33 KB

Description:

Silicon n-channel power mosfet.

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CS4N70A3D Silicon N-Channel Power MOSFET Huajing Microelectronics

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