CS4N70A3HD-G Datasheet - Huajing Microelectronics

CS4N70A3HD-G Silicon N-Channel Power MOSFET

CS4N70 A3HD-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization.

CS4N70A3HD-G Features

* l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 15nC) l Low Reverse transfer capacitances(Typical: 9pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter

CS4N70A3HD-G-HuajingMicroelectronics.pdf