CS4N70FA9D Datasheet, Mosfet, Huajing Microelectronics

CS4N70FA9D Features

• Mosfet l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 15nC) l Low Reverse transfer capacitances(Typical: 9pF) l 100% Single Pulse avalanche energy Test Applicatio

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Part number:

CS4N70FA9D

Manufacturer:

Huajing Microelectronics

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930.18kb

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📄 Datasheet

Description:

Silicon n-channel power mosfet. CS4N70F A9D, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduct

CS4N70FA9D Application

• Applications Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a

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CS4N70FA9D

Huajing Microelectronics

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