CS4N80A3HD1-G - Silicon N-Channel Power MOSFET

CR Micro

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Datasheet Details

Part number	CS4N80A3HD1-G
Manufacturer	CR Micro
File Size	462.44 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	CS4N80A3HD1-G-CRMicro.pdf

CS4N80A3HD1-G Product details

Description

CS4N80 A3HD1-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.The package form is TO-251, which accords with the RoHS standard.

Features

Fast Switching.
ESD Improved Capability.
Low Gate Charge (Typical Data: 25nC).
Low Reverse transfer capacitances(Typical:7.5pF).
100% Single Pulse avalanche energy Test.
Halogen Free.

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Published: Dec 19, 2024 |