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CS4N80A3HD1-G Datasheet - CR Micro

Silicon N-Channel Power MOSFET

CS4N80A3HD1-G Features

* Fast Switching

* ESD Improved Capability

* Low Gate Charge (Typical Data: 25nC)

* Low Reverse transfer capacitances(Typical:7.5pF)

* 100% Single Pulse avalanche energy Test

* Halogen Free Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ un

CS4N80A3HD1-G General Description

CS4N80 A3HD1-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturizatio.

CS4N80A3HD1-G Datasheet (462.44 KB)

Preview of CS4N80A3HD1-G PDF

Datasheet Details

Part number:

CS4N80A3HD1-G

Manufacturer:

CR Micro

File Size:

462.44 KB

Description:

Silicon n-channel power mosfet.

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CS4N80A3HD1-G Silicon N-Channel Power MOSFET CR Micro

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