CS4145A8H Datasheet - Huajing Microelectronics

CS4145A8H Silicon N-Channel Power MOSFET

CS4145 A8H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve VDSS ID PD(TC=25℃) RDS(ON)Typ 60 84 200 8.5 switching performance and enhance the avalanche energy. The transistor can be used in various power switc.

CS4145A8H Features

* l TrenchFET Power MOSFET l Low ON Resistance(Rdson≤10mΩ) l Low Gate Charge (Typical Data:82nC) l Low Reverse transfer capacitances(Typical:260pF) l 100% Single Pulse avalanche energy Test Applications： UPS,DC Motor Control and Class D Amplifier. Absolute（Tc= 25℃ unless otherwise specified）： Symbo

CS4145A8H Datasheet (349.54 KB)