CS55N06A4 Datasheet - CR Micro

CS55N06A4, Silicon N-Channel Power MOSFET

Silicon N-Channel Power Trench MOSFET ○R CS55N06 A4 General .
CS55N06 A4, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trenchtechnology which reduce the conduction loss, improve swit.

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Datasheet Details

Part number:

CS55N06A4

Manufacturer:

CR Micro

File Size:

2.01 MB

Description:

Silicon N-Channel Power MOSFET

Applications

* Power switch circuit of adaptor and charger. Absolute（TJ= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2 PD TJ，Tstg Drain-to-Source Voltage Continuous Drain Current TC = 25 °C Continuous Drain Current TC = 100 °C Pulsed Drain Current TC = 25 °C Gate-to-Source Voltage

CS55N06A4 Distributors

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CS55N06A4 Silicon N-Channel Power MOSFET CR Micro

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