CS55N06A4 Silicon N-Channel Power MOSFET

CR Micro

Description

Silicon N-Channel Power Trench MOSFET ○R CS55N06 A4 General .
CS55N06 A4, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trenchtechnology which reduce the conduction loss, improve swit.

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Datasheet Specifications

Part number: CS55N06A4
Manufacturer: CR Micro
File Size: 2.01 MB
Datasheet: CS55N06A4-CRMicro.pdf
Description: Silicon N-Channel Power MOSFET

Applications

* Power switch circuit of adaptor and charger. Absolute（TJ= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2 PD TJ，Tstg Drain-to-Source Voltage Continuous Drain Current TC = 25 °C Continuous Drain Current TC = 100 °C Pulsed Drain Current TC = 25 °C Gate-to-Source Voltage

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CS55N06A4 Silicon N-Channel Power MOSFET CR Micro

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