CS55N06A4 Datasheet - CR Micro

CS55N06A4 Silicon N-Channel Power MOSFET

CS55N06 A4, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trenchtechnology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and highe.

CS55N06A4 Features

* l Fast Switching l ESD Improved Capability l Low ON Resistance l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test VDSS ID RDS(ON)Typ 60 V 55 A 10 mΩ Applications： Power switch circuit of adaptor and charger. Absolute（TJ= 25℃ unless otherwise spe

CS55N06A4-CRMicro.pdf