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CS55N10A8

Silicon N-Channel Power MOSFET

CS55N10A8 Features

* l Fast Switching l Low ON Resistance(Rdson≤15 mΩ) l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. 100 V 68 A 55 A 140 W 12 mΩ Absolute（Tj= 25℃ unless otherwise specified） Symbol Paramet

CS55N10A8 General Description

CS55N10 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is VDSS ID（Silicon limited current） ID（Package limited） PD RDS(ON)Typ suitable for .

CS55N10A8 Datasheet (502.75 KB)

Preview of CS55N10A8 PDF

Datasheet Details

Part number:

CS55N10A8

Manufacturer:

CR Micro

File Size:

502.75 KB

Description:

Silicon n-channel power mosfet.

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CS55N10A8 Silicon N-Channel Power MOSFET CR Micro

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