CS55N06AQ3-G Datasheet - CR Micro

CS55N06AQ3-G Silicon N-Channel Power MOSFET

CS55N06 AQ3-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trenchtechnology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization a.

CS55N06AQ3-G Features

* l Fast Switching l Low ON Resistance l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test l Halogen Free Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2 P

CS55N06AQ3-G-CRMicro.pdf