CS55N10A8-G - Silicon N-Channel Power MOSFET
CS55N10 A8-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
This device is VDSS ID（Silicon limited current） ID（Package limited） PD RDS(ON)Typ suitable fo
CS55N10A8-G Features
* l Fast Switching l Low ON Resistance(Rdson≤15 mΩ) l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test l Halogen Free Applications： Power switch circuit of adaptor and charger. 100 V 68 A 55 A 140 W 12 mΩ Absolute（Tj= 25℃ unless otherwise specified）
