CS55N25FA9R - Silicon N-Channel Power MOSFET
CS55N25F A9R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD (TC=25℃) RDS(ON)Typ performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit
CS55N25FA9R Features
* Fast Switching
* Low ON Resistance
* Low Gate Charge
* Low Reverse transfer capacitances
* 100% Single Pulse avalanche energy Test Applications： Power switch circuit of electron ballast and adaptor. 250 V 55 A 50 W 56 mΩ Absolute（TJ= 25℃ unless otherwise specifi
