CS5N65A8R Datasheet - CR Micro

CS5N65A8R Silicon N-Channel Power MOSFET

CS5N65 A8R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and high.

CS5N65A8R Features

* l Fast Switching l Low ON Resistance(Rdson≤2.8Ω) l Low Gate Charge (Typical Data: 14.5nC) l Low Reverse transfer capacitances(Typical:3.5pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Pa

CS5N65A8R-CRMicro.pdf