HGD032N03A

Silicon N-Channel Power MOSFET

CR Micro

HGD032N03A Features

* l Fast Switching l Low ON Resistance l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. E-cigarette,Electric Tool Absolute（Tj= 25℃ unless otherwise specified） Symbol VDSS ID IDMa2 VGS EAS a2 PD

HGD032N03A General Description

HGD032N03A, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is suitable for use as a load switch and PWM applications. The package form is TO-252.

HGD032N03A Datasheet (772.33 KB)

HGD032N03A Datasheet Preview — Preview of HGD032N03A PDF

Datasheet Details

Part number:

HGD032N03A

Manufacturer:

CR Micro

File Size:

772.33 KB

Description:

Silicon n-channel power mosfet.

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HGD032N03A Silicon N-Channel Power MOSFET CR Micro

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HGD032N03A Features

HGD032N03A General Description

Datasheet Details

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