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HGD065NE4A

Silicon N-Channel Power MOSFET

HGD065NE4A Features

* Fast Switching

* Low ON Resistance(Rdson≤6.5mΩ)

* Low Gate Charge

* Low Reverse transfer capacitances

* 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. E-cigarette,Electric Tool Absolute（Tj= 25℃ unless otherwise specified） Sy

HGD065NE4A General Description

HGD065NE4A, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is suitable for use as a load switch and PWM applications. The package form is TO-252.

HGD065NE4A Datasheet (791.02 KB)

Preview of HGD065NE4A PDF

Datasheet Details

Part number:

HGD065NE4A

Manufacturer:

CR Micro

File Size:

791.02 KB

Description:

Silicon n-channel power mosfet.

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HGD065NE4A Silicon N-Channel Power MOSFET CR Micro

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