HGD065NE4A - Silicon N-Channel Power MOSFET
HGD065NE4A, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
This device is suitable for use as a load switch and PWM applications.
The package form is TO-252
HGD065NE4A Features
* Fast Switching
* Low ON Resistance(Rdson≤6.5mΩ)
* Low Gate Charge
* Low Reverse transfer capacitances
* 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. E-cigarette,Electric Tool Absolute（Tj= 25℃ unless otherwise specified） Sy
