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HGD065NE4A Silicon N-Channel Power MOSFET

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Description

Silicon N-Channel Power MOSFET ○R HGD065NE4A General .
HGD065NE4A, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve swi.

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Datasheet Specifications

Part number
HGD065NE4A
Manufacturer
CR Micro
File Size
791.02 KB
Datasheet
HGD065NE4A-CRMicro.pdf
Description
Silicon N-Channel Power MOSFET

Features

* Fast Switching
* Low ON Resistance(Rdson≤6.5mΩ)
* Low Gate Charge
* Low Reverse transfer capacitances

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