HGD10N04A - Silicon N-Channel Power MOSFET
VDSS ID（Silicon limited current） HGD10N04A, the silicon N-channel Enhanced VDMOSFETs, is ID（Package limited） obtained by the high density Trench technology which reduce the PD conduction loss, improve switching performance and enhance the avalanche energy.
This device is suitable for use as A
HGD10N04A Features
* Fast Switching
* Low ON Resistance
* Low Gate Charge
* Low Reverse transfer capacitances
* 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. ® 45 V 50 A 30 A 41.2 W 9 mΩ Absolute（Tj= 25℃ unless otherwise specified） S
