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HGD10N04A

Silicon N-Channel Power MOSFET

HGD10N04A Features

* Fast Switching

* Low ON Resistance

* Low Gate Charge

* Low Reverse transfer capacitances

* 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. ® 45 V 50 A 30 A 41.2 W 9 mΩ Absolute（Tj= 25℃ unless otherwise specified） S

HGD10N04A General Description

VDSS ID（Silicon limited current） HGD10N04A, the silicon N-channel Enhanced VDMOSFETs, is ID（Package limited） obtained by the high density Trench technology which reduce the PD conduction loss, improve switching performance and enhance the avalanche energy. This device is suitable for use as A .

HGD10N04A Datasheet (698.44 KB)

Preview of HGD10N04A PDF

Datasheet Details

Part number:

HGD10N04A

Manufacturer:

CR Micro

File Size:

698.44 KB

Description:

Silicon n-channel power mosfet.

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HGD10N04A Silicon N-Channel Power MOSFET CR Micro

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