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HGD09N06A-G Datasheet - CR Micro

HGD09N06A-G Silicon N-Channel Power MOSFET

HGD09N06A-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is suitable for use as a load switch and PWM applications. The package form is TO-25.

HGD09N06A-G-CRMicro.pdf

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Datasheet Details

Part number:

HGD09N06A-G

Manufacturer:

CR Micro

File Size:

776.79 KB

Description:

Silicon n-channel power mosfet.

HGD09N06A-G Distributor

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HGD09N06A-G HGD09N06A-G Silicon N-Channel Power MOSFET CR Micro