Datasheet4U Logo Datasheet4U.com

HGD09N06A-G

Silicon N-Channel Power MOSFET

HGD09N06A-G General Description

HGD09N06A-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is suitable for use as a load switch and PWM applications. The package form is TO-25.

HGD09N06A-G Datasheet (776.79 KB)

Preview of HGD09N06A-G PDF

Datasheet Details

Part number:

HGD09N06A-G

Manufacturer:

CR Micro

File Size:

776.79 KB

Description:

Silicon n-channel power mosfet.

📁 Related Datasheet

HGD029NE4SL 45V N-Ch Power MOSFET (Hunteck)

HGD032N03A Silicon N-Channel Power MOSFET (CR Micro)

HGD032N04A Silicon N-Channel Power MOSFET (CR Micro)

HGD045NE4SL 45V N-Ch Power MOSFET (Hunteck)

HGD065NE4A Silicon N-Channel Power MOSFET (CR Micro)

HGD080N08SL 80V N-Ch Power MOSFET (Hunteck)

HGD10N04A Silicon N-Channel Power MOSFET (CR Micro)

HG-0111 GaAs Hall Element (AKM)

HG-0112 GaAs Hall Element (AKM)

HG-0113 GaAs Hall Element (AKM)

TAGS

HGD09N06A-G Silicon N-Channel Power MOSFET CR Micro

Image Gallery

HGD09N06A-G Datasheet Preview Page 2 HGD09N06A-G Datasheet Preview Page 3

HGD09N06A-G Distributor