HGD09N06A-G Silicon N-Channel Power MOSFET

CR Micro

Description

Silicon N-Channel Power MOSFET ○R HGD09N06A-G General .
HGD09N06A-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve sw.

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Datasheet Specifications

Part number: HGD09N06A-G
Manufacturer: CR Micro
File Size: 776.79 KB
Datasheet: HGD09N06A-G-CRMicro.pdf
Description: Silicon N-Channel Power MOSFET

Applications

* The package form is TO-252, which accords with the RoHS standard. VD SS ID PD RD S ( O N)Typ VGS=10V 60 V 55 A 59.5 W 8.1 mΩ F e atures：
* Fast Switching
* Low ON Resistance( Rdson ≤ 9 . 8 mΩ)
* Low Gate Charge
* Low Reverse transfer capacitances
* 100% Single Pulse aval

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HGD09N06A-G Silicon N-Channel Power MOSFET CR Micro

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