HGQ014N04A-G - Silicon N-Channel Power MOSFET
VDSS 40 V HGQ014N04A-G, the silicon N-channel Enhanced ID(Silicon Limited) 200 A VDMOSFETs, is obtained by the high density Trench ID(Package Limited) 100 A technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
This device is PD RD
HGQ014N04A-G Features
* l Fast Switching l Low ON Resistance l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test l Halogen Free Applications： l Power switch circuit of adaptor and charger. l Synchronus Rectification in DC/DC and AC/DC Converters Absolute（TJ= 25℃ unless otherwis
