HGQ022N03A - Silicon N-Channel Power MOSFET
HGQ022N03A, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
This device is VDSS ID (Silicon Limited) ID(Package Limited) PD RDS(ON)Typ suitable for use as
HGQ022N03A Features
* l Fast Switching l Low ON Resistance(Rdson≤2.2mΩ) l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. E-cigarette,Electric Tool Absolute（Tj= 25℃ unless otherwise specified） Symbol Parameter Rati
