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HGQ018N03A

Silicon N-Channel Power MOSFET

HGQ018N03A Features

* Fast Switching

* Low ON Resistance(Rdson≤1.8mΩ)

* Low Gate Charge

* Low Reverse transfer capacitances

* 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. E-cigarette,Electric Tool Absolute（Tj= 25℃ unless otherwise specifie

HGQ018N03A General Description

HGQ018N03A, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is suitable for use as a load switch and PWM applications. The package form is .

HGQ018N03A Datasheet (856.32 KB)

Preview of HGQ018N03A PDF

Datasheet Details

Part number:

HGQ018N03A

Manufacturer:

CR Micro

File Size:

856.32 KB

Description:

Silicon n-channel power mosfet.

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TAGS

HGQ018N03A Silicon N-Channel Power MOSFET CR Micro

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