HGQ014N04B-G - Silicon N-Channel Power MOSFET
VDSS 40 V HGQ014N04B-G, the silicon N-channel Enhanced ID(Silicon Limited) 200 A VDMOSFETs, is obtained by the high density Trench ID(Package Limited) 100 A technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
This device is PD RD
HGQ014N04B-G Features
* Fast Switching
* Low ON Resistance
* Low Gate Charge
* Low Reverse transfer capacitances
* 100% Single Pulse avalanche energy Test
* Halogen Free Applications：
* Power switch circuit of adaptor and charger.
* Synchronus Rectification in DC/DC and AC/DC Convert
