HGQ014N04B-G Datasheet - CR Micro

HGQ014N04B-G Silicon N-Channel Power MOSFET

VDSS 40 V HGQ014N04B-G, the silicon N-channel Enhanced ID(Silicon Limited) 200 A VDMOSFETs, is obtained by the high density Trench ID(Package Limited) 100 A technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is PD RD.

HGQ014N04B-G Features

* Fast Switching

* Low ON Resistance

* Low Gate Charge

* Low Reverse transfer capacitances

* 100% Single Pulse avalanche energy Test

* Halogen Free Applications：

* Power switch circuit of adaptor and charger.

* Synchronus Rectification in DC/DC and AC/DC Convert

HGQ014N04B-G-CRMicro.pdf

HGQ014N04B-G Datasheet Preview — Preview of HGQ014N04B-G PDF

Datasheet Details

Part number:

HGQ014N04B-G

Manufacturer:

CR Micro

File Size:

725.71 KB

Description:

Silicon n-channel power mosfet.

HGQ014N04B-G Distributor

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HGQ014N04B-G HGQ014N04B-G Silicon N-Channel Power MOSFET CR Micro