HGQ09N06A Silicon N-Channel Power MOSFET

CR Micro

Description

Silicon N-Channel Power MOSFET ○R HGQ09N06A General .
HGQ09N06A, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve swit.

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Datasheet Specifications

Part number: HGQ09N06A
Manufacturer: CR Micro
File Size: 1.24 MB
Datasheet: HGQ09N06A-CRMicro.pdf
Description: Silicon N-Channel Power MOSFET

Features

* Fast Switching
* Low ON Resistance(Rdson≤9.8mΩ)
* Low Gate Charge
* Low Reverse transfer capacitances

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HGQ09N06A Silicon N-Channel Power MOSFET CR Micro

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