HGQ09N06A Datasheet - CR Micro

HGQ09N06A Silicon N-Channel Power MOSFET

HGQ09N06A, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching VDSS ID PD RDS(ON)Typ performance and enhance the avalanche energy. This device is suitable for use as a load switch and PWM applications. Th.

HGQ09N06A Features

* Fast Switching

* Low ON Resistance(Rdson≤9.8mΩ)

* Low Gate Charge

* Low Reverse transfer capacitances

* 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. E-cigarette,Electric Tool Absolute（Tj= 25℃ unless otherwise specifi

HGQ09N06A Datasheet (1.24 MB)