Datasheet Specifications
- Part number
- CG2H40010
- Manufacturer
- CREE
- File Size
- 2.30 MB
- Datasheet
- CG2H40010-CREE.pdf
- Description
- RF Power GaN HEMT
Description
CG2H40010 10 W, DC - 6 GHz, RF Power GaN HEMT Cree’s CG2H40010 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).The CG.Features
* Up to 8 GHz OperationCG2H40010 Distributors
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