* Up to 8 GHz Operation
* 18 dB Small Signal Gain at 2.0 GHz
* 16 dB Small Signal Gain at 4.0 GHz
* 17 W typical PSAT
* 70 % Efficiency at PSAT
* 28 V Operation APPLICATIONS
* 2-Way Private Radio
* Broadband Amplifiers
CG2H40010
CREE
2.30 MB
Rf power gan hemt.
CG2H40010
10 W, DC - 6 GHz, RF Power GaN HEMT
Cree’s CG2H40010 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG.
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CG2 MINIATURE CLAMPER / DAMPER GLASS PASSIVATED RECTIFIER (General Semiconductor)
