CG2H40010 Datasheet (CREE) - RF Power GaN HEMT

CG2H40010, RF Power GaN HEMT

CG2H40010 10 W, DC - 6 GHz, RF Power GaN HEMT Cree’s CG2H40010 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).

The CG2H40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications.

GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CG2H40010 ideal for linear and compressed amplifier circuits.

The transistor is available in both screwdown, flange and solder-down,

CG2H40010 Features

* Up to 8 GHz Operation

* 18 dB Small Signal Gain at 2.0 GHz

* 16 dB Small Signal Gain at 4.0 GHz

* 17 W typical PSAT

* 70 % Efficiency at PSAT

* 28 V Operation APPLICATIONS

* 2-Way Private Radio

* Broadband Amplifiers