CG2H40010
CREE
2.30MB
Rf power gan hemt.
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📁 Related Datasheet
CG2H40010 - RF Power GaN HEMT
(MACOM)
CG2H40010
10 W, DC - 8 GHz, RF Power GaN HEMT
Description
The CG2H40010 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT.
CG2H40025 - RF Power GaN HEMT
(CREE)
CG2H40025
25 W, 28 V RF Power GaN HEMT
Cree’s CG2H40025 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40025.
CG2H40025 - RF Power GaN HEMT
(MACOM)
CG2H40025
25 W, 28 V RF Power GaN HEMT
Description
The CG2H40025 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The .
CG2H40025 - 28V RF Power GaN HEMT
(Wolfspeed)
CG2H40025
25 W, 28 V RF Power GaN HEMT
Description
Wolfspeed’s CG2H40025 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEM.
CG2H40035 - RF Power GaN HEMT
(Wolfspeed)
CG2H40035
35 W, DC - 6 GHz, RF Power GaN HEMT
Description
Wolfspeed’s CG2H40035 is an unmatched, gallium nitride (GaN) high electron mobility transist.
CG2H40045 - RF Power GaN HEMT
(MACOM)
CG2H40045
45 W, DC - 4 GHz RF Power GaN HEMT
Description
The CG2H40045 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).
CG2H40045 - RF Power GaN HEMT
(CREE)
CG2H40045
45 W, DC - 4 GHz RF Power GaN HEMT
Cree’s CG2H40045 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2.
CG2H40120 - 28V RF Power GaN HEMT
(MACOM)
CG2H40120
120 W, 28 V, RF Power GaN HEMT
Description
The CG2H40120 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). Th.
CG2H30070F - RF Power GaN HEMT
(MACOM)
CG2H30070F
70 W, DC - 4.0 GHz, 28 V, RF Power GaN HEMT
Description
The CG2H30070F is an internally matched gallium nitride (GaN) high electron mobilit.
CG2 - MINIATURE CLAMPER / DAMPER GLASS PASSIVATED RECTIFIER
(General Semiconductor)
CG2 AND DG2
MINIATURE CLAMPER / DAMPER GLASS PASSIVATED RECTIFIER
Reverse Voltage - 1400 to 1500 Volts
* D
Forward Current - 2.0 Amperes
FEATURES
P .