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CG2H40010 RF Power GaN HEMT

CG2H40010 Description

CG2H40010 10 W, DC - 6 GHz, RF Power GaN HEMT Cree’s CG2H40010 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).The CG.

CG2H40010 Features

* Up to 8 GHz Operation
* 18 dB Small Signal Gain at 2.0 GHz
* 16 dB Small Signal Gain at 4.0 GHz
* 17 W typical PSAT
* 70 % Efficiency at PSAT

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Datasheet Details

Part number
CG2H40010
Manufacturer
CREE
File Size
2.30 MB
Datasheet
CG2H40010-CREE.pdf
Description
RF Power GaN HEMT

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Power GaN HEMT CREE
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