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CG2H40045 RF Power GaN HEMT

CG2H40045 Description

CG2H40045 45 W, DC - 4 GHz RF Power GaN HEMT Cree’s CG2H40045 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).The CG2.

CG2H40045 Features

* Up to 4 GHz Operation
* 18 dB Small Signal Gain at 2.0 GHz
* 14 dB Small Signal Gain at 4.0 GHz
* 55 W Typical PSAT
* 60 % Efficiency at PSAT

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Datasheet Details

Part number
CG2H40045
Manufacturer
CREE
File Size
1.25 MB
Datasheet
CG2H40045-CREE.pdf
Description
RF Power GaN HEMT

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Power GaN HEMT CREE
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