CG2H40045 RF Power GaN HEMT

CREE

Description

CG2H40045 45 W, DC - 4 GHz RF Power GaN HEMT Cree’s CG2H40045 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).The CG2.

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Datasheet Specifications

Part number: CG2H40045
Manufacturer: CREE
File Size: 1.25 MB
Datasheet: CG2H40045-CREE.pdf
Description: RF Power GaN HEMT

Features

* Up to 4 GHz Operation
* 18 dB Small Signal Gain at 2.0 GHz
* 14 dB Small Signal Gain at 4.0 GHz
* 55 W Typical PSAT
* 60 % Efficiency at PSAT

CG2H40045 Distributors

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CG2H40045 Power GaN HEMT CREE

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