* Up to 4 GHz Operation
* 18 dB Small Signal Gain at 2.0 GHz
* 14 dB Small Signal Gain at 4.0 GHz
* 55 W Typical PSAT
* 60 % Efficiency at PSAT
* 28 V Operation APPLICATIONS
* 2-Way Private Radio
* Broadband Amplifiers
CG2H40045
CREE
1.25 MB
Rf power gan hemt.
CG2H40045
45 W, DC - 4 GHz RF Power GaN HEMT
Cree’s CG2H40045 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2.
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CG2 MINIATURE CLAMPER / DAMPER GLASS PASSIVATED RECTIFIER (General Semiconductor)
