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CS5N10AE-G-1 - Silicon N-Channel Power MOSFET

CS5N10AE-G-1 Description

Silicon N-Channel Power MOSFET ○R CS5N10 AE-G-1 General .
CS5N10 AE-G-1, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve.

CS5N10AE-G-1 Features

* Fast Switching
* Low ON Resistance(Rdson≤67 mΩ)
* Low Gate Charge
* Low Reverse transfer capacitances
* 100% Single Pulse avalanche energy Test

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Datasheet Details

Part number
CS5N10AE-G-1
Manufacturer
CR Micro
File Size
802.75 KB
Datasheet
CS5N10AE-G-1-CRMicro.pdf
Description
Silicon N-Channel Power MOSFET

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Silicon N-Channel Power MOSFET CR Micro
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