MTB7D5N10RH8 - N-Channel Enhancement Mode Power MOSFET
MTB7D5N10RH8 Features
* Low On Resistance
* Simple Drive Requirement
* Low Gate Charge
* Fast Switching Characteristic
* RoHS compliant package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=20A RDS(ON)@VGS=4.5V, ID=16A 110V 53A 11.8A 6.4mΩ(typ) 9.3 mΩ(typ) Symbol MTB7D5N10RH8 G：
