MTB7D5N10RH8 N-Channel Enhancement Mode Power MOSFET

CYStech Electronics

MTB7D5N10RH8 Description

CYStech Electronics Corp.Spec.No.: C639H8 Issued Date : 2019.08.08 Revised Date : Page No.: 1/ 11 N-Channel Enhancement Mode Power MOSFET MTB7D5.

MTB7D5N10RH8 Features

* Low On Resistance
* Simple Drive Requirement
* Low Gate Charge
* Fast Switching Characteristic
* RoHS compliant package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=20A RDS(ON)@VGS=4.5V, ID=16A 110V 53A 11.8A 6.4mΩ(typ) 9.3 mΩ(typ) Symbol MTB7D5N10RH8 G：

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Datasheet Details

Part number: MTB7D5N10RH8
Manufacturer: CYStech Electronics
File Size: 797.22 KB
Datasheet: MTB7D5N10RH8-CYStechElectronics.pdf
Description: N-Channel Enhancement Mode Power MOSFET

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N-Channel Enhancement Mode Power MOSFET CYStech Electronics

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