* Low On Resistance
* Simple Drive Requirement
* Low Gate Charge
* Fast Switching Characteristic
* RoHS compliant package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=20A RDS(ON)@VGS=4.5V, ID=16A 110V 53A 11.8A 6.4mΩ(typ) 9.3 mΩ(typ) Symbol MTB7D5N10RH8 G：
MTB7D5N10RH8 Datasheet (797.22 KB)
MTB7D5N10RH8
CYStech Electronics
797.22 KB
N-channel enhancement mode power mosfet.
CYStech Electronics Corp. Spec. No. : C639H8 Issued Date : 2019.08.08 Revised Date : Page No. : 1/ 11 N-Channel Enhancement Mode Power MOSFET MTB7D5.
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