MTB75N05HD TMOS POWER FET

Motorola

Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB75N05HD/D ™ Data Sheet HDTMOS E-FET.™ High Energy Power FET D2PAK for Surface Mount.

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Datasheet Specifications

Part number: MTB75N05HD
Manufacturer: Motorola
File Size: 254.49 KB
Datasheet: MTB75N05HD_Motorola.pdf
Description: TMOS POWER FET

Features

* unction of drain current, the mathematical solution is complex. The MOSFET output capacitance also complicates the mathematics. And finally, MOSFETs have finite internal gate resistance which effectively adds to the resistance of the driving source, but the internal resistance is difficult to measur

Applications

* that require the use of surface mount components with higher power and lower RDS(on) capabilities. This advanced high
* cell density HDTMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain
* to

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MTB75N05HD TMOS POWER FET Motorola

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