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MTB75N05HD TMOS POWER FET

MTB75N05HD Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB75N05HD/D ™ Data Sheet HDTMOS E-FET.™ High Energy Power FET D2PAK for Surface Mount.

MTB75N05HD Features

* unction of drain current, the mathematical solution is complex. The MOSFET output capacitance also complicates the mathematics. And finally, MOSFETs have finite internal gate resistance which effectively adds to the resistance of the driving source, but the internal resistance is difficult to measur

MTB75N05HD Applications

* that require the use of surface mount components with higher power and lower RDS(on) capabilities. This advanced high
* cell density HDTMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain
* to

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Datasheet Details

Part number
MTB75N05HD
Manufacturer
Motorola
File Size
254.49 KB
Datasheet
MTB75N05HD_Motorola.pdf
Description
TMOS POWER FET

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TMOS POWER FET Motorola
Motorola MTB75N05HD-like datasheet