MTB75N05HD Datasheet (Motorola)

MTB75N05HD, TMOS POWER FET

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB75N05HD/D ™ Data Sheet HDTMOS E-FET.™ High Energy Power FET D2PAK for Surface Mount Designer's MTB75N05HD Motorola Preferred Device N Channel Enhancement Mode Silicon Gate The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower RDS(on) capabilities.

MTB75N05HD Features

* unction of drain current, the mathematical solution is complex. The MOSFET output capacitance also complicates the mathematics. And finally, MOSFETs have finite internal gate resistance which effectively adds to the resistance of the driving source, but the internal resistance is difficult to measur