MTB75N06HD TMOS POWER FET

Motorola

Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB75N06HD/D ™ Data Sheet HDTMOS E-FET.™ High Energy Power FET D2PAK for Surface Mount.

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Datasheet Specifications

Part number: MTB75N06HD
Manufacturer: Motorola
File Size: 342.06 KB
Datasheet: MTB75N06HD_Motorola.pdf
Description: TMOS POWER FET

Features

* quently, is not specified. The resistive switching time variation versus gate resistance (Figure 9) shows how typical switching performance is affected by the parasitic circuit elements. If the parasitics were not present, the slope of the curves would maintain a value of unity regardless of the swi

Applications

* that require the use of surface mount components with higher power and lower RDS(on) capabilities. This advanced high
* cell density HDTMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain
* to

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MTB75N06HD TMOS POWER FET Motorola

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