MTB75N03HDL TMOS POWER FET

Motorola

Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB75N03HDL/D Advanced Information HDTMOS E-FET.™ High Density Power FET D2PAK for Su.

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Datasheet Specifications

Part number: MTB75N03HDL
Manufacturer: Motorola
File Size: 304.84 KB
Datasheet: MTB75N03HDL_Motorola.pdf
Description: TMOS POWER FET

Features

* rd mounted components. Most power electronic loads are inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. 15000 Ciss VDS =

Applications

* that require the use of surface mount components with higher power and lower RDS(on) capabilities. This advanced high
* cell density HDTMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain
* to

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MTB75N03HDL TMOS POWER FET Motorola

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