Datasheet4U Logo Datasheet4U.com

MTB75N03HDL TMOS POWER FET

MTB75N03HDL Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB75N03HDL/D Advanced Information HDTMOS E-FET.™ High Density Power FET D2PAK for Su.

MTB75N03HDL Features

* rd mounted components. Most power electronic loads are inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. 15000 Ciss VDS =

MTB75N03HDL Applications

* that require the use of surface mount components with higher power and lower RDS(on) capabilities. This advanced high
* cell density HDTMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain
* to

📥 Download Datasheet

Preview of MTB75N03HDL PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
MTB75N03HDL
Manufacturer
Motorola
File Size
304.84 KB
Datasheet
MTB75N03HDL_Motorola.pdf
Description
TMOS POWER FET

📁 Related Datasheet

  • MTB7D5N10RH8 - N-Channel Enhancement Mode Power MOSFET (CYStech Electronics)
  • MTB - METALLIZED POLYESTER FILM CAPACITORS (RUBYCON CORPORATION)
  • MTB-F000329MNHNAA-B - LCD Module (Microtips)
  • MTB-F000368MNHNAA - LCD Module (Microtips)
  • MTB001 - High Output Interface Driver ICs (Shindengen Electric)
  • MTB001D01-1 - LCD Module (CSOT)
  • MTB010A03H8 - Dual N-Channel Enhancement Mode Power MOSFET (CYStech)
  • MTB010A06RH8 - Dual N-Channel Enhancement Mode Power MOSFET (CYStech)

📌 All Tags

TMOS POWER FET Motorola
Motorola MTB75N03HDL-like datasheet