MTB75N03HDL Datasheet (Motorola)

MTB75N03HDL, TMOS POWER FET

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB75N03HDL/D Advanced Information HDTMOS E-FET.™ High Density Power FET D2PAK for Surface Mount N Channel Enhancement Mode Silicon Gate The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower RDS(on) capabilities.

This advanced high cell density

MTB75N03HDL Features

* rd mounted components. Most power electronic loads are inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. 15000 Ciss VDS =