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MTBB5N10L3 N-Channel Enhancement Mode Power MOSFET

MTBB5N10L3 Description

CYStech Electronics Corp.Spec.No.: C593L3 Issued Date : 2010.07.07 Revised Date : 2018.02.09 Page No.: 1/8 N -Channel Logic Level Enhancement Mo.

MTBB5N10L3 Features

* RDSON@VGS=4.5V, ID=5A
* Low Gate Charge
* Simple Drive Requirement
* Pb-free lead plating & Halogen-free package 100V 5A 129mΩ (typ. ) 134mΩ (typ. ) 136mΩ (typ. ) Equivalent Circuit MTBB5N10L3 G：Gate D：Drain S：Source Outline SOT-223 D S D G Ordering Information Device MTBB

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Datasheet Details

Part number
MTBB5N10L3
Manufacturer
CYStech
File Size
432.24 KB
Datasheet
MTBB5N10L3-CYStech.pdf
Description
N-Channel Enhancement Mode Power MOSFET

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N-Channel Enhancement Mode Power MOSFET CYStech
CYStech MTBB5N10L3-like datasheet