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MTP1406L3 - P-Channel Enhancement Mode Power MOSFET

MTP1406L3 Description

CYStech Electronics Corp.P-Channel Enhancement Mode Power MOSFET Spec.No.: C733L3 Issued Date : 2012.02.14 Revised Date : 2012.03.09 Page No.: 1/.

MTP1406L3 Features

* Simple Drive Requirement
* Low On-resistance
* Fast switching Characteristic
* Pb-free lead plating package BVDSS ID RDSON@VGS=-10V, ID=-4A RDSON@VGS=-10V, ID=-1.5A RDSON@VGS=-4.5V, ID=-2A -60V -4.8A 75mΩ (typ. ) 74mΩ (typ. ) 99mΩ (typ. ) Symbol MTP1406L3 Outline S

MTP1406L3 Applications

* or systems.
* CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTP1406L3 CYStek Product Specification

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Datasheet Details

Part number
MTP1406L3
Manufacturer
CYStech Electronics
File Size
329.26 KB
Datasheet
MTP1406L3-CYStechElectronics.pdf
Description
P-Channel Enhancement Mode Power MOSFET

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P-Channel Enhancement Mode Power MOSFET CYStech Electronics
CYStech Electronics MTP1406L3-like datasheet