CP317V Datasheet - Central Semiconductor

CP317V Small Signal Transistor

PROCESS CP317V Small Signal Transistor NPN - RF Transistor Chip PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY EPITAXIAL PLANAR 14.5 x 14.5 MILS 7.1 MILS 2.4 x 2.2 MILS 2.4 x 2.2 MILS Al - 30,000Å Au - 18,000Å GROSS DIE PER 4 INCH WAFER 53,788 PRINCIPAL DEVICE TYPES CMPT918 2N918 2N2857 2N5179 2N5770 BFY90 PN3563 PN3564 w w w. c e n t r a l s e m i . c o m R0 (30-August 2011) PROCESS CP317V .

CP317V-CentralSemiconductor.pdf

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Datasheet Details

Part number:

CP317V

Manufacturer:

Central Semiconductor ↗

File Size:

211.71 KB

Description:

Small signal transistor.

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CP317V CP317V Small Signal Transistor Central Semiconductor

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