CPS053 Datasheet - Central Semiconductor

CPS053 Silicon Controlled Rectifier Sensitive Gate SCR

PROCESS CPS053 Silicon Controlled Rectifier 2.0 Amp Sensitive Gate SCR Chip PROCESS DETAILS Process Die Size Die Thickness Cathode Bonding Pad Area Gate Bonding Pad Area Top Side Metalization Back Side Metalization www.DataSheet4U.com Glass Passivated Mesa 53 x 53 MILS 8.7 MILS 20 x 10 MILS 7.9 x 7.9 MILS Al - 45,000Å Al/Mo/Ni/Ag - 32,000Å GEOMETRY GROSS DIER PER 4 INCH WAFER 3,884 PRINCIPAL DEVICE TYPES CS92-2M Series CS223-2M Series MCR22-6 Series 145 Adams Avenue Hauppauge, NY 11788 US.

CPS053_CentralSemiconductor.pdf