CPS057 Datasheet (Central Semiconductor) - Silicon Controlled Rectifier Sensitive Gate SCR

CPS057, Silicon Controlled Rectifier Sensitive Gate SCR

PROCESS CPS057 Silicon Controlled Rectifier Sensitive Gate SCR Chip PROCESS DETAILS Process Die Size Die Thickness Cathode Bonding Pad Area Gate Bonding Pad Area Top Side Metalization Back Side Metalization www.DataSheet4U.com GLASS PASSIVATED MESA 57 x 57 MILS 8.7 MILS ± 0.6 MILS 24 x 14 MILS 7.9 x 7.9 MILS Al - 45,000Å Al/Mo/Ni/Ag - 32,000Å GEOMETRY GROSS DIE PER 4 INCH WAFER 3,374 PRINCIPAL DEVICE TYPES CS39-4D 2N2323 thru 2N2329 CS223-4M BACKSIDE ANODE 145 Adams Avenue Hauppauge, NY 11