CWDM3011N Datasheet - Central Semiconductor

N-channel MOSFET

CWDM3011N Features

* Low rDS(ON)

* High current

* Low gate charge MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Steady State) Maximum Pulsed Drain Current, tp=10μs Power Dissipation Operating and Storage Junction Temperature Thermal Resistance

CWDM3011N General Description

The CENTRAL SEMICONDUCTOR CWDM3011N is a high current silicon N-Channel enhancement-mode MOSFET designed for high speed pulsed amplifier and driver applications. This energy efficient MOSFET offers beneficially low rDS(ON), low gate charge, and low threshold voltage. MARKING CODE: C3011N SOIC-8 C.

CWDM3011N Datasheet (533.33 KB)