CWDM305N Datasheet - Central Semiconductor

N-channel MOSFET

CWDM305N Features

* Low rDS(ON)

* High current

* Low gate charge MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Steady State) Maximum Pulsed Drain Current, tp=10μs Power Dissipation Operating and Storage Junction Temperature Thermal Resistance

CWDM305N General Description

The CENTRAL SEMICONDUCTOR CWDM305N is a high current N-channel enhancement-mode silicon MOSFET designed for high speed pulsed amplifier and driver applications. This energy efficient MOSFET offers beneficially low rDS(ON), low gate charge, and low threshold voltage. MARKING CODE: C305N SOIC-8 CAS.

CWDM305N Datasheet (901.68 KB)