CWDM305PD Datasheet - Central Semiconductor

Dual P-Channel MOSFET

CWDM305PD Features

* Low rDS(ON) (83mΩ MAX @ VGS=5.0V)

* High current (ID=5.3A) MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Steady State) Maximum Pulsed Drain Current, tp=10μs Power Dissipation Operating and Storage Junction Temperature Thermal Resist

CWDM305PD General Description

The CENTRAL SEMICONDUCTOR CWDM305PD is a dual high current P-channel enhancement-mode silicon MOSFET manufactured by the P-channel DMOS process, and is designed for high speed pulsed amplifier and driver applications. This MOSFET offers high current, low rDS(ON), low threshold voltage, and low gate.

CWDM305PD Datasheet (315.39 KB)