CWDM305PD Datasheet - Central Semiconductor

CWDM305PD Dual P-Channel MOSFET

The CENTRAL SEMICONDUCTOR CWDM305PD is a dual high current P-channel enhancement-mode silicon MOSFET manufactured by the P-channel DMOS process, and is designed for high speed pulsed amplifier and driver applications. This MOSFET offers high current, low rDS(ON), low threshold voltage, and low gate.

CWDM305PD Features

* Low rDS(ON) (83mΩ MAX @ VGS=5.0V)

* High current (ID=5.3A) MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Steady State) Maximum Pulsed Drain Current, tp=10μs Power Dissipation Operating and Storage Junction Temperature Thermal Resist

CWDM305PD Datasheet (315.39 KB)