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CWDM305ND N-channel MOSFET

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Description

CWDM305ND SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w.c e n t r a l s e m i .c o m .
The CENTRAL SEMICONDUCTOR CWDM305ND is a dual, high current N-channel enhancement-mode silicon MOSFET designed for high speed pulsed amplifier and dr.

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Features

* Low rDS(ON)
* High current
* Low gate charge MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Steady State) Maximum Pulsed Drain Current, tp=10μs Power Dissipation Operating and Storage Junction Temperature Thermal Resistance

Applications

* This energy efficient MOSFET offers beneficially low rDS(ON), low gate charge, and low threshold voltage. MARKING CODE: C305 SOIC-8 CASE APPLICATIONS:
* Load/Power switches
* DC-DC converter circuits

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